A typical SCR V-I characteristic is as shown below:

Home Study Material A typical SCR V-I characteristic is as shown below:
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A typical SCR V-I characteristic is as shown below:

𝑉𝐵𝑂=Forward breakover voltage
𝑉𝐵𝑅=Reverse breakover voltage
𝐼𝑔=Gate current
𝑉𝑎=Anode voltage across the thyristor terminal A,K.
𝐼𝑎=Anode current
It can be inferred from the static V-I characteristic of SCR. SCR have 3 modes of
operation:
1. Reverse blocking mode
2. Forward blocking mode ( off state)
3. Forward conduction mode (on state)
1. Reverse Blocking Mode
When cathode of the thyristor is made positive with respect to anode with switch open
thyristor is reverse biased. Junctions 𝐽1 and 𝐽2 are reverse biased where junction 𝐽2 is
forward biased. The device behaves as if two diodes are connected in series with reverse
voltage applied across them.
ï‚· A small leakage current of the order of few mA only flows. As the thyristor is
reverse biased and in blocking mode. It is called as acting in reverse blocking
mode of operation.
ï‚· Now if the reverse voltage is increased, at a critical breakdown level called
reverse breakdown voltage 𝑉𝐵𝑅,an avalanche occurs at 𝐽1 and 𝐽3 and the reverse
current increases rapidly. As a large current associated with 𝑉𝐵𝑅 and hence more
losses to the SCR.
This results in Thyristor damage as junction temperature may exceed its maximum
temperature rise.
2. Forward Blocking Mode
When anode is positive with respect to cathode, with gate circuit open, thyristor is said to
be forward biased.
Thus junction 𝐽1 and 𝐽3 are forward biased and 𝐽2 is reverse biased. As the forward
voltage is increases junction 𝐽2 will have an avalanche breakdown at a voltage called
forward breakover voltage𝑉𝐵𝑂. When forward voltage is less then 𝑉𝐵𝑂thyristor offers high
impedance. Thus a thyristor acts as an open switch in forward blocking mode.
3. Forward Conduction Mode
Here thyristor conducts current from anode to cathode with a very small voltage drop
across it. So a thyristor can be brought from forward blocking mode to forward
conducting mode:
1. By exceeding the forward breakover voltage.
2. By applying a gate pulse between gate and cathode.
During forward conduction mode of operation thyristor is in on state and behave like a
close switch. Voltage drop is of the order of 1 to 2mV. This small voltage drop is due to
ohmic drop across the four layers of the device.