During the triggering process of the thyristor from forward blocking state to forward conduction state through the gate signal, by applying the gate signal (voltage between gate and cathode) increases the minority carrier density in the p-layer and thereby facilitate the reverse break over of the junction J2 and thyristor starts conducting. Higher the magnitude of the gate current pulse, lesser is the time required to inject the charge and turning on the scr. By controlling the amount of charge we can control the turning on time of the scr.